AFP2913W Datasheet. Specs and Replacement

Type Designator: AFP2913W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: DFN2X2-6L

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AFP2913W datasheet

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AFP2913W

AFP2913W Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2913W, P-Channel enhancement mode -25V/-4.5A,RDS(ON)=120m @VGS=-10V MOSFET, uses Advanced Trench Technology -25V/-3.8A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 8.1. Size:769K  alfa-mos
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AFP2913W

AFP2911W Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2911W, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=96m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-3.8A,RDS(ON)=128m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=180m @VGS=-1.8V These devices are particularly suited fo... See More ⇒

Detailed specifications: AFP2333A, AFP2337A, AFP2341, AFP2343A, AFP2367AS, AFP2367S, AFP2379, AFP2911W, IRFP460, AFP3050S, AFP3401AS, AFP3401S, AFP3403, AFP3403A, AFP3405, AFP3407AS, AFP3407S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.