AFP3405 Datasheet. Specs and Replacement

Type Designator: AFP3405  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT-23

  📄📄 Copy 

AFP3405 substitution

- MOSFET ⓘ Cross-Reference Search

 

AFP3405 datasheet

 ..1. Size:462K  alfa-mos
 afp3405.pdf pdf_icon

AFP3405

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒

 8.1. Size:662K  alfa-mos
 afp3407as.pdf pdf_icon

AFP3405

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒

 8.2. Size:766K  alfa-mos
 afp3401as.pdf pdf_icon

AFP3405

AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70 @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80 @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105 @VGS=-2.5V These devices are particularly suited for lo... See More ⇒

 8.3. Size:565K  alfa-mos
 afp3403.pdf pdf_icon

AFP3405

AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m @VGS=-2.5V These devices are particularly suited fo... See More ⇒

SHOW MORE

Detailed specifications: AFP2379, AFP2911W, AFP2913W, AFP3050S, AFP3401AS, AFP3401S, AFP3403, AFP3403A, IRF640N, AFP3407AS, AFP3407S, AFP3411, AFP3413, AFP3413A, AFP3415, AFP3425, AFP3459

Keywords - AFP3405 MOSFET specs

 AFP3405 cross reference

 AFP3405 equivalent finder

 AFP3405 pdf lookup

 AFP3405 substitution

 AFP3405 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility