All MOSFET. AFP4435WS Datasheet

 

AFP4435WS Datasheet and Replacement


   Type Designator: AFP4435WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8P
 

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AFP4435WS Datasheet (PDF)

 ..1. Size:589K  alfa-mos
 afp4435ws.pdf pdf_icon

AFP4435WS

AFP4435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 6.1. Size:518K  alfa-mos
 afp4435w.pdf pdf_icon

AFP4435WS

AFP4435W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 7.1. Size:589K  alfa-mos
 afp4435s.pdf pdf_icon

AFP4435WS

AFP4435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 7.2. Size:518K  alfa-mos
 afp4435.pdf pdf_icon

AFP4435WS

AFP4435 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4435, P-Channel enhancement mode -30V/-10A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ - 7A,RDS(ON)=45m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

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Datasheet: AFP3679S , AFP3804 , AFP3981 , AFP3993 , AFP4403 , AFP4435 , AFP4435S , AFP4435W , IRF4905 , AFP4447 , AFP4535 , AFP4535W , AFP4599W , AFP4637 , AFP4637W , AFP4925 , AFP4925S .

History: NVMFS5C430NL | STN3PF06 | IRFP452 | BUK9M3R3-40H | IRFU214PBF | NCE60P12K | APT12M80B

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