AFP8206 Datasheet. Specs and Replacement
Type Designator: AFP8206 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1000 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TSOP-6
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AFP8206 substitution
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AFP8206 datasheet
afp8206.pdf
AFP8206 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=1.8V These devices are particularly suited for low ... See More ⇒
Detailed specifications: AFP4953S, AFP4953WS, AFP6405S, AFP6405WS, AFP6459, AFP6801, AFP6993, AFP7617WS, IRFP450, AFP8451, AFP8452, AFP8463, AFP8473, AFP8483, AFP8803, AFP8823, AFP8833
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
