All MOSFET. AFP8206 Datasheet

 

AFP8206 Datasheet and Replacement


   Type Designator: AFP8206
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1000 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TSOP-6
 

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AFP8206 Datasheet (PDF)

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AFP8206

AFP8206 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=1.8V These devices are particularly suited for low

Datasheet: AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , AFP6801 , AFP6993 , AFP7617WS , IRF1407 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 , AFP8833 .

History: SL607B | 4N80G-TND-R | NTTFS4C13N | IPI60R190C6 | FQD50P06 | 4N80AF | NTHS5404T1G

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