AFP8206 Datasheet and Replacement
Type Designator: AFP8206
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1000 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TSOP-6
AFP8206 substitution
AFP8206 Datasheet (PDF)
afp8206.pdf

AFP8206 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=1.8V These devices are particularly suited for low
Datasheet: AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , AFP6459 , AFP6801 , AFP6993 , AFP7617WS , IRF1407 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , AFP8483 , AFP8803 , AFP8823 , AFP8833 .
History: SL607B | 4N80G-TND-R | NTTFS4C13N | IPI60R190C6 | FQD50P06 | 4N80AF | NTHS5404T1G
Keywords - AFP8206 MOSFET datasheet
AFP8206 cross reference
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History: SL607B | 4N80G-TND-R | NTTFS4C13N | IPI60R190C6 | FQD50P06 | 4N80AF | NTHS5404T1G



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