IRLU220A Specs and Replacement
Type Designator: IRLU220A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ -
Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO251
- MOSFET ⓘ Cross-Reference Search
IRLU220A datasheet
..1. Size:904K 1
irlu220a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.609 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte... See More ⇒
9.1. Size:313K international rectifier
irlr2703 irlu2703.pdf
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te... See More ⇒
9.2. Size:335K international rectifier
irlr2908pbf irlu2908pbf.pdf
PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ... See More ⇒
9.3. Size:260K international rectifier
irlr2705pbf irlu2705pbf.pdf
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p... See More ⇒
9.4. Size:313K international rectifier
irlu2703pbf irlr2703pbf.pdf
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te... See More ⇒
9.5. Size:260K international rectifier
irlu2705pbf irlr2705pbf.pdf
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p... See More ⇒
9.6. Size:314K international rectifier
irlr2905pbf irlu2905pbf.pdf
PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t... See More ⇒
9.7. Size:328K international rectifier
irlu2905zpbf irlr2905zpbf.pdf
PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒
9.8. Size:314K international rectifier
irlr2905 irlu2905.pdf
PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t... See More ⇒
9.9. Size:340K international rectifier
irlr2905zpbf irlu2905zpbf.pdf
PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒
9.10. Size:230K fairchild semi
irlr230a irlu230a.pdf
IRLR/U230A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒
9.11. Size:232K fairchild semi
irlr210a irlu210a.pdf
IRLR/U210A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒
9.12. Size:261K inchange semiconductor
irlu2908.pdf
isc N-Channel MOSFET Transistor IRLU2908 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
9.13. Size:261K inchange semiconductor
irlu2703.pdf
isc N-Channel MOSFET Transistor IRLU2703 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
9.14. Size:260K inchange semiconductor
irlu2705.pdf
isc N-Channel MOSFET Transistor IRLU2705 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
9.15. Size:255K inchange semiconductor
irlu2905z.pdf
isc N-Channel MOSFET Transistor IRLU2905Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: IRLU024, IRLU024A, IRLU024N, IRLU110A, IRLU120A, IRLU120N, IRLU130A, IRLU210A, 60N06, IRLU230A, IRLU2703, IRLU2705, IRLU2905, IRLU3103, IRLU3303, IRLU3410, IRLW510A
Keywords - IRLU220A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
