AFP8483
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP8483
Marking Code: 8483
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package:
SOT-223
AFP8483
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP8483
Datasheet (PDF)
..1. Size:493K alfa-mos
afp8483.pdf
AFP8483 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8483, P-Channel enhancement mode -100V/-3.8A,RDS(ON)= 260m@VGS= -10V MOSFET, uses Advanced Trench Technology -100V/-2.6A,RDS(ON)= 290m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particula
9.1. Size:537K alfa-mos
afp8452.pdf
AFP8452 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8452, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
9.2. Size:797K alfa-mos
afp8463.pdf
AFP8463 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8463, P-Channel enhancement mode -40V/-6.0A,RDS(ON)= 46m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-4.2A,RDS(ON)= 62m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.3. Size:567K alfa-mos
afp8451.pdf
AFP8451 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8451, P-Channel enhancement mode -60V/-3.0A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
9.4. Size:574K alfa-mos
afp8473.pdf
AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8473, P-Channel enhancement mode -60V/-4.8A,RDS(ON)= 135m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)= 155m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
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