All MOSFET. AFP8483 Datasheet

 

AFP8483 Datasheet and Replacement


   Type Designator: AFP8483
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT-223
 

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AFP8483 Datasheet (PDF)

 ..1. Size:493K  alfa-mos
 afp8483.pdf pdf_icon

AFP8483

AFP8483 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8483, P-Channel enhancement mode -100V/-3.8A,RDS(ON)= 260m@VGS= -10V MOSFET, uses Advanced Trench Technology -100V/-2.6A,RDS(ON)= 290m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particula

 9.1. Size:537K  alfa-mos
 afp8452.pdf pdf_icon

AFP8483

AFP8452 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8452, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.2. Size:797K  alfa-mos
 afp8463.pdf pdf_icon

AFP8483

AFP8463 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8463, P-Channel enhancement mode -40V/-6.0A,RDS(ON)= 46m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-4.2A,RDS(ON)= 62m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.3. Size:567K  alfa-mos
 afp8451.pdf pdf_icon

AFP8483

AFP8451 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8451, P-Channel enhancement mode -60V/-3.0A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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Datasheet: AFP6801 , AFP6993 , AFP7617WS , AFP8206 , AFP8451 , AFP8452 , AFP8463 , AFP8473 , STF13NM60N , AFP8803 , AFP8823 , AFP8833 , AFP8931 , AFP8943 , AFP8989 , AFP8995 , AFP9407 .

History: BUZ381 | FTP02N60C | PDN3912S | FS5UM-9 | SVF10N65STR | MTM76320 | BUZ40B

Keywords - AFP8483 MOSFET datasheet

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