AFP9565S MOSFET Datasheet: P-Ch, 40V, 17A. Full specification with pinout and replacement list

AFP9565S Specs and Replacement

Type Designator: AFP9565S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: TO-252

AFP9565S substitution

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AFP9565S datasheet

..1. Size:821K alfa-mos
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AFP9565S Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9565S, P-Channel enhancement mode -40V/ -8.6A,RDS(ON)= 58m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/ -6.2A,RDS(ON)= 86m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particular... See More ⇒

8.1. Size:784K alfa-mos
afp9566w.pdf pdf_icon

AFP9566W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)= 80m @VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-3.5A,RDS(ON)= 105m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒

9.1. Size:830K alfa-mos
afp9577.pdf pdf_icon

AFP9577 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9577, P-Channel enhancement mode -60V/-4A,RDS(ON)= 305m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3A,RDS(ON)= 330m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

9.2. Size:751K alfa-mos
afp9576.pdf pdf_icon

AFP9576 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9576, P-Channel enhancement mode -60V/-14A,RDS(ON)= 115m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-10A,RDS(ON)= 125m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒