All MOSFET. ALD1106SBL Datasheet

 

ALD1106SBL MOSFET. Datasheet pdf. Equivalent


   Type Designator: ALD1106SBL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 10 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.0048 A
   Tjⓘ - Maximum Junction Temperature: 70 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
   Package: SOIC-14

 ALD1106SBL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ALD1106SBL Datasheet (PDF)

 7.1. Size:100K  ald
ald1106 ald1116.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in

 8.1. Size:66K  ald
ald1103.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit

 8.2. Size:75K  ald
ald1101.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-

 8.3. Size:103K  ald
ald110808-series.pdf

ALD1106SBL
ALD1106SBL

TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour

 8.4. Size:104K  ald
ald110814 ald110914.pdf

ALD1106SBL
ALD1106SBL

TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol

 8.5. Size:76K  ald
ald1102.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEAR ALD1102A/ALD1102BDEVICES, INC.ALD1102DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1102 is a monolithic dual P-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-

 8.6. Size:54K  ald
ald1108e ald1110e.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building

 8.7. Size:66K  ald
ald1105.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEARDEVICES, INC.ALD1105DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1105 is a monolithic dual N-channel and dual P-channel Precision current mirrorscomplementary matched transistor pair intended for a broad range of Complementary push-pull linear drivesanalog applications. These enhancement-mode transistors are

 8.8. Size:46K  ald
ald1107 ald1117.pdf

ALD1106SBL
ALD1106SBL

ADVANCEDLINEARALD1107/ALD1117DEVICES, INC.QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSThe ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- Precision current sourcesment mode matched MOSFET transistor arrays intended for a broad range Precision current mirrorsof precision analog applications. The ALD1107/ALD1117 offer high input

 8.9. Size:106K  ald
ald110800 ald110800a ald110900 ald110900a.pdf

ALD1106SBL
ALD1106SBL

TMADVANCEDEPADLINEARDEVICES, INC.ALD110800/ALD110800A/ALD110900/ALD110900AQUAD/DUAL N-CHANNEL ZERO THRESHOLD EPADVGS(th)= +0.00VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONFEATURESALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic quad/ Precision zero threshold voltage modedual N-Channel MOSFETs matched at the factory using ALDs proven Nominal RDS

 8.10. Size:104K  ald
ald110804 ald110904.pdf

ALD1106SBL
ALD1106SBL

TMADVANCEDEPADLINEARDEVICES, INC.ALD110804/ALD110904QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110804/ALD110904 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology

 8.11. Size:104K  ald
ald110802 ald110902.pdf

ALD1106SBL
ALD1106SBL

TMADVANCEDEPADLINEARDEVICES, INC.ALD110802/ALD110902QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.20VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110802/ALD110902 are monolithic quad/dual enhancement mode N- Ultra low power (nanowatt) analog and digitalChannel MOSFETS matched at the factory using ALDs proven EPAD circuitsCMOS technology

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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