All MOSFET. 2N6756JANTX Datasheet

 

2N6756JANTX MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6756JANTX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO3

2N6756JANTX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6756JANTX Datasheet (PDF)

4.1. 2n6756.pdf Size:136K _update-mosfet

2N6756JANTX
2N6756JANTX



4.2. 2n6755 2n6756.pdf Size:136K _fairchild_semi

2N6756JANTX
2N6756JANTX



 4.3. 2n6756 irf130.pdf Size:147K _international_rectifier

2N6756JANTX
2N6756JANTX

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFETTRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18Ω 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique process

Datasheet: 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN , IRF4905 , 2N6756JANTXV , 2N6756JTX , 2N6756JTXV , 2N6757 , 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV .

 

 
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