IRLU3410 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLU3410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 34(max) nC
trⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO251
IRLU3410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLU3410 Datasheet (PDF)
irlu3410pbf irlr3410pbf.pdf
PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec
irlr3410pbf irlu3410pbf.pdf
PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec
irlu3410.pdf
isc N-Channel MOSFET Transistor IRLU3410FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3410p.pdf
IRLU3410Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
irlu3103pbf irlr3103pbf.pdf
PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irlr3715zcpbf irlu3715zcpbf.pdf
PD - 96053IRLR3715ZCPbFIRLU3715ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Ultra-Low Gate Impedancel Fully Characterized Avalanche VoltageD-Pa
irlr3714 irlu3714.pdf
PD - 94266IRLR3714SMPS MOSFETIRLU3714HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
irlr3105pbf irlu3105pbf.pdf
PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie
irlu3715pbf irlr3715pbf.pdf
PD - 95555ASMPS MOSFETIRLR3715PbFIRLU3715PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
irlu3714pbf irlr3714pbf.pdf
PD - 95554AIRLR3714PbFSMPS MOSFETIRLU3714PbFHEXFET Power MOSFETApplicationsl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSD-Pak I-Pak
irlu3303pbf irlr3303pbf.pdf
PD- 95086AIRLR/U3303PbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-ResistanceVDSS = 30Vl Surface Mount (IRLR3303)l Straight Lead (IRLU3303)RDS(on) = 0.031l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche RatedID = 35ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t
irlr3802pbf irlu3802pbf.pdf
PD - 95089AIRLR3802PbFIRLU3802PbFHEXFET Power MOSFETApplicationsl High Frequency 3.3V and 5V input Point-VDSS RDS(on) max Qgof-Load Synchronous Buck Converters12V 8.5m 27nCl Power Management for Netcom,Computing and Portable Applications.l Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)l Fully Characterized Avalanche Voltageand Current D-Pak I-
irlu3114zpbf irlr3114zpbf.pdf
PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance
irlu3717pbf irlr3717pbf.pdf
PD - 95776AIRLR3717PbFIRLU3717PbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl
irlr3705zpbf irlu3705zpbf.pdf
PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel
irlu3636pbf irlr3636pbf.pdf
PD - 96224IRLR3636PbFIRLU3636PbFApplicationsl DC Motor DriveHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS 60Vl High Speed Power SwitchingRDS(on) typ.5.4ml Hard Switched and High Frequency Circuits max. 6.8mGID (Silicon Limited)99ABenefitsID (Package Limited)50ASl Optimized for Logic Level
irlu3110zpbf irlr3110zpbf.pdf
PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to
irlu3715zpbf irlr3715zpbf.pdf
PD - 95088AIRLR3715ZPbFIRLU3715ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsD-Pak I-Pakl Ultra-Low Gate ImpedanceIRLR3715Z IRLU3715Zl Fully Cha
irlr3915pbf irlu3915pbf.pdf
PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista
irlu3714zpbf irlr3714zpbf.pdf
PD - 95775AIRLR3714ZPbFIRLU3714ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power 20V 15m 4.7nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl
irlr3715 irlu3715.pdf
PD - 94177SMPS MOSFETIRLR3715IRLU3715HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
irlr3636pbf irlu3636pbf.pdf
PD - 96224IRLR3636PbFIRLU3636PbFApplicationsl DC Motor DriveHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS 60Vl High Speed Power SwitchingRDS(on) typ.5.4ml Hard Switched and High Frequency Circuits max. 6.8mGID (Silicon Limited)99ABenefitsID (Package Limited)50ASl Optimized for Logic Level
irlr3717pbf irlu3717pbf.pdf
PD - 95776AIRLR3717PbFIRLU3717PbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl
irlr3105pbf irlu3105pbf.pdf
PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie
irlr3103pbf irlu3103pbf.pdf
PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irlr3110zpbf irlu3110zpbf.pdf
PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to
auirlr3110z auirlu3110z.pdf
AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
irlr3114zpbf irlu3114zpbf.pdf
PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance
irlr3705zpbf irlu3705zpbf.pdf
PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel
auirlr3114z auirlu3114z.pdf
AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
irlr3915pbf irlu3915pbf.pdf
PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista
irlu3103p.pdf
IRLU3103Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Gen III Power MOSFET0.07 at VGS = 10 V 53 100 % Rg TestedRoHS30 19 nCCOMPLIANT 100 % UIS Tested0.09 at VGS = 4.5 V 48APPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D STo
irlu3717.pdf
isc N-Channel MOSFET Transistor IRLU3717FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3705z.pdf
isc N-Channel MOSFET Transistor IRLU3705ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3915.pdf
isc N-Channel MOSFET Transistor IRLU3915FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3636.pdf
isc N-Channel MOSFET Transistor IRLU3636FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3802.pdf
isc N-Channel MOSFET Transistor IRLU3802FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3110z.pdf
isc N-Channel MOSFET Transistor IRLU3110ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3105.pdf
isc N-Channel MOSFET Transistor IRLU3105FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3114z.pdf
isc N-Channel MOSFET Transistor IRLU3114ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3303.pdf
isc N-Channel MOSFET Transistor IRLU3303FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3715z.pdf
isc N-Channel MOSFET Transistor IRLU3715ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3103.pdf
isc N-Channel MOSFET Transistor IRLU3103FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Datasheet: IRLU210A , IRLU220A , IRLU230A , IRLU2703 , IRLU2705 , IRLU2905 , IRLU3103 , IRLU3303 , 20N60 , IRLW510A , IRLW520A , IRLW530A , IRLW540A , IRLW610A , IRLW620A , IRLW630A , IRLW640A .
