IRLU3410 Datasheet. Specs and Replacement

Type Designator: IRLU3410  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO251

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IRLU3410 datasheet

 ..1. Size:285K  international rectifier
irlr3410pbf irlu3410pbf.pdf pdf_icon

IRLU3410

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒

 ..2. Size:285K  international rectifier
irlu3410pbf irlr3410pbf.pdf pdf_icon

IRLU3410

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒

 ..3. Size:261K  inchange semiconductor
irlu3410.pdf pdf_icon

IRLU3410

isc N-Channel MOSFET Transistor IRLU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 0.1. Size:1462K  cn vbsemi
irlu3410p.pdf pdf_icon

IRLU3410

IRLU3410P www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise... See More ⇒

Detailed specifications: IRLU210A, IRLU220A, IRLU230A, IRLU2703, IRLU2705, IRLU2905, IRLU3103, IRLU3303, IRF840, IRLW510A, IRLW520A, IRLW530A, IRLW540A, IRLW610A, IRLW620A, IRLW630A, IRLW640A

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