IRLW520A PDF and Equivalents Search

 ..1. Size:165K  1
 irli520a irlw520a.pdf

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 ..2. Size:905K  samsung
 irlw520a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol... See More ⇒

 9.1. Size:166K  1
 irli530a irlw530a.pdf

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 9.2. Size:344K  1
 irli540a irlw540a.pdf

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 9.3. Size:260K  fairchild semi
 irlw510a irli510a.pdf

IRLW/I510A FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 1 2 3 3 1. Gate 2. Drai... See More ⇒

 9.4. Size:950K  samsung
 irlw530a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute ... See More ⇒

 9.5. Size:960K  samsung
 irlw540a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.058 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area o C 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Ab... See More ⇒

 9.6. Size:813K  samsung
 irlw510a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area o C 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source ... See More ⇒