All MOSFET. IRFB4332PBF Datasheet

 

IRFB4332PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4332PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 390 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 99 nC

Drain-Source Capacitance (Cd): 530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm

Package: TO-220AB

IRFB4332PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4332PBF Datasheet (PDF)

1.1. irfb4332pbf.pdf Size:306K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 97099A IRFB4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m: RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG fo

2.1. irfb4332.pdf Size:245K _inchange_semiconductor

IRFB4332PBF
IRFB4332PBF

isc N-Channel MOSFET Transistor IRFB4332,IIRFB4332 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤33mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

 4.1. irfb4310zpbf.pdf Size:324K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

4.2. irfb4310pbf.pdf Size:376K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 4.3. irfb4310zgpbf.pdf Size:291K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 96189 IRFB4310ZGPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

4.4. irfb4321pbf.pdf Size:277K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 97103B IRFB4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m : l Hard Switched and High Frequency Circuits max. 15m : Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

 4.5. irfb4321gpbf.pdf Size:283K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 96215 IRFB4321GPbF Applications HEXFET® Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

4.6. irfb4310gpbf.pdf Size:285K _upd-mosfet

IRFB4332PBF
IRFB4332PBF

PD - 96190 IRFB4310GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

4.7. irfb4310z.pdf Size:251K _inchange_semiconductor

IRFB4332PBF
IRFB4332PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z, IIRFB4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXI

4.8. irfb4310zpbf.pdf Size:206K _inchange_semiconductor

IRFB4332PBF
IRFB4332PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

4.9. irfb4321.pdf Size:245K _inchange_semiconductor

IRFB4332PBF
IRFB4332PBF

isc N-Channel MOSFET Transistor IRFB4321,IIRFB4321 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM

4.10. irfb4321pbf.pdf Size:206K _inchange_semiconductor

IRFB4332PBF
IRFB4332PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF ·FEATURES ·With low gate drive requirements ·Improved diode recovery improves switching ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

4.11. irfb4310.pdf Size:245K _inchange_semiconductor

IRFB4332PBF
IRFB4332PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310, IIRFB4310 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMU

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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