IRFB4410ZPBF PDF and Equivalents Search

 

IRFB4410ZPBF Specs and Replacement

Type Designator: IRFB4410ZPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 97 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220AB

IRFB4410ZPBF substitution

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IRFB4410ZPBF datasheet

 ..1. Size:330K  international rectifier
 irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf pdf_icon

IRFB4410ZPBF

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l... See More ⇒

 5.1. Size:294K  international rectifier
 irfb4410zgpbf.pdf pdf_icon

IRFB4410ZPBF

PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized C... See More ⇒

 5.2. Size:245K  inchange semiconductor
 irfb4410zg.pdf pdf_icon

IRFB4410ZPBF

isc N-Channel MOSFET Transistor IRFB4410ZG IIRFB4410ZG FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 5.3. Size:251K  inchange semiconductor
 irfb4410z.pdf pdf_icon

IRFB4410ZPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410Z IIRFB4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒

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Detailed specifications: IRFB4310GPBF , IRFB4310PBF , IRFB4310ZGPBF , IRFB4310ZPBF , IRFB4321GPBF , IRFB4321PBF , IRFB4332PBF , IRFB4410ZGPBF , IRF520 , IRFB4510PBF , IRFB4610PBF , IRFB4615PBF , IRFB4620PBF , IRFB4710PBF , IRFB52N15DPBF , IRFB5615PBF , IRFB5620PBF .

Keywords - IRFB4410ZPBF MOSFET specs

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