IRFBC20PBF Datasheet. Specs and Replacement
Type Designator: IRFBC20PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-220AB
IRFBC20PBF substitution
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IRFBC20PBF datasheet
irfbc20pbf.pdf
PD - 94985 IRFBC20PbF Lead-Free 2/5/04 Document Number 91006 www.vishay.com 1 IRFBC20PbF Document Number 91006 www.vishay.com 2 IRFBC20PbF Document Number 91006 www.vishay.com 3 IRFBC20PbF Document Number 91006 www.vishay.com 4 IRFBC20PbF Document Number 91006 www.vishay.com 5 IRFBC20PbF Document Number 91006 www.vishay.com 6 IRFBC20PbF TO-220AB Package Out... See More ⇒
irfbc20pbf sihfbc20.pdf
IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
irfbc20s irfbc20l.pdf
PD - 9.1014 IRFBC20S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBC20S) D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating RDS(on) = 4.4 150 C Operating Temperature G Fast Switching ID = 2.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer ... See More ⇒
Detailed specifications: IRFB9N30APBF, IRFB9N60APBF, IRFB9N65APBF, IRFBA1404PPBF, IRFBA1405PPBF, IRFBA22N50APBF, IRFBA90N20DPBF, IRFBC20LPBF, AON7403, IRFBC30AL, IRFBC30ALPBF, IRFBC30APBF, IRFBC30ASPBF, IRFBC30LPBF, IRFBC30PBF, IRFBC30SPBF, AM10N30-600I
Keywords - IRFBC20PBF MOSFET specs
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