IRFBC30AL Specs and Replacement
Type Designator: IRFBC30AL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-262
IRFBC30AL substitution
- MOSFET ⓘ Cross-Reference Search
IRFBC30AL datasheet
irfbc30aspbf irfbc30alpbf.pdf
PD- 95534 SMPS MOSFET IRFBC30AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 600V 2.2 3.6A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan... See More ⇒
irfbc30as irfbc30al.pdf
PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 2.2 3.6A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre... See More ⇒
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca... See More ⇒
irfbc30al irfbc30alpbf irfbc30aspbf.pdf
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca... See More ⇒
Detailed specifications: IRFB9N60APBF, IRFB9N65APBF, IRFBA1404PPBF, IRFBA1405PPBF, IRFBA22N50APBF, IRFBA90N20DPBF, IRFBC20LPBF, IRFBC20PBF, K2611, IRFBC30ALPBF, IRFBC30APBF, IRFBC30ASPBF, IRFBC30LPBF, IRFBC30PBF, IRFBC30SPBF, AM10N30-600I, AM10P10-530D
Keywords - IRFBC30AL MOSFET specs
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