All MOSFET. AM1320N Datasheet

 

AM1320N Datasheet and Replacement


   Type Designator: AM1320N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SC-70
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AM1320N Datasheet (PDF)

 ..1. Size:193K  analog power
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AM1320N

Analog Power AM1320NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 2.0battery-powered products suc

 9.1. Size:290K  analog power
am1323p.pdf pdf_icon

AM1320N

Analog Power AM1323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)150 @ VGS = -4.5V -1.3 Low thermal impedance -20190 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: SC70-3 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

 9.2. Size:254K  analog power
am1321p.pdf pdf_icon

AM1320N

Analog Power AM1321PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -1.7converters and power management in portable and -20battery-powered produc

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History: ALD1103DB | CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | SFFX054Z

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