AM1321P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM1321P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.34
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 1.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.2
nC
trⓘ - Rise Time: 9
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.079
Ohm
Package:
SC-70
AM1321P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM1321P
Datasheet (PDF)
..1. Size:254K analog power
am1321p.pdf
Analog Power AM1321PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -1.7converters and power management in portable and -20battery-powered produc
9.1. Size:290K analog power
am1323p.pdf
Analog Power AM1323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)150 @ VGS = -4.5V -1.3 Low thermal impedance -20190 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: SC70-3 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE
9.2. Size:193K analog power
am1320n.pdf
Analog Power AM1320NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 2.0battery-powered products suc
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