AM1434N Specs and Replacement

Type Designator: AM1434N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SC-70

AM1434N substitution

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AM1434N datasheet

 ..1. Size:53K  analog power
 am1434n.pdf pdf_icon

AM1434N

Analog Power AM1434N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5 battery-powered products su... See More ⇒

 9.1. Size:100K  analog power
 am1432ne.pdf pdf_icon

AM1434N

Analog Power AM1432NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7 battery-powered products su... See More ⇒

 9.2. Size:64K  analog power
 am1433pe.pdf pdf_icon

AM1434N

Analog Power AM1433PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1 converters and power management in portable and -30 battery-powered produc... See More ⇒

 9.3. Size:143K  analog power
 am1430n.pdf pdf_icon

AM1434N

Analog Power AM1430N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3 battery-powered products such... See More ⇒

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Detailed specifications: AM1370N, AM1400NE, AM1420N, AM1421P, AM1430N, AM1431P, AM1432NE, AM1433PE, P55NF06, AM1440N, AM1523CE, AM1535CE, AM1537CE, AM1541CE, AM1561CE, AM1580CE, AM1590CE

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.