IRLWZ34A MOSFET Datasheet: N-Ch, 60V, 30A. Full specification with pinout and replacement list

IRLWZ34A Specs and Replacement

Type Designator: IRLWZ34A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO263

IRLWZ34A substitution

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IRLWZ34A datasheet

..1. Size:220K samsung
irlwz34a.pdf pdf_icon

IRLW/IZ34A Advanced Power MOSFET FEATURES BVDSS = 16 V Avalanche Rugged Technology RDS(on) = 0.046 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 1 2 3 3 1. Gate 2. Drain... See More ⇒

9.1. Size:222K samsung
irlwz44a.pdf pdf_icon

IRLW/IZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.025 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 1 2 3 3 1. Gate 2. Drain ... See More ⇒

9.2. Size:217K samsung
irlwz24a.pdf pdf_icon

IRLW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 1 2 3 3 1. Gate 2. Dra... See More ⇒

9.3. Size:214K samsung
irlwz14a.pdf pdf_icon

IRLW/IZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 1 2 3 3 1. Gate 2. Dra... See More ⇒

Detailed specifications: IRLW530A, IRLW540A, IRLW610A, IRLW620A, IRLW630A, IRLW640A, IRLWZ14A, IRLWZ24A, IRF640N, IRLWZ44A, IRLZ10, IRLZ14, IRLZ14A, IRLZ20, IRLZ24, IRLZ24A, IRLZ24N