AM20N10-250DE
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM20N10-250DE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 4
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO-252
AM20N10-250DE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM20N10-250DE
Datasheet (PDF)
..1. Size:86K analog power
am20n10-250de.pdf 
Analog Power AM20N10-250DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11Sconverters and power management in portable and 100355 @ VG = 4.5V
2.1. Size:289K analog power
am20n10-250d.pdf
Analog Power AM20N10-250DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V11 Low thermal impedance 100355 @ VGS = 4.5V10 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost
2.2. Size:859K cn vbsemi
am20n10-250d.pdf
AM20N10-250Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
6.1. Size:305K analog power
am20n10-350d.pdf
Analog Power AM20N10-350DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)420 @ VGS = 10V9.0 Low thermal impedance 100460 @ VGS = 5.5V8.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
6.2. Size:287K analog power
am20n10-115d.pdf
Analog Power AM20N10-115DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)115 @ VGS = 10V17 Low thermal impedance 100135 @ VGS = 4.5V16 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2
6.3. Size:73K analog power
am20n10-130d.pdf
Analog Power AM20N10-130DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17converters and power management in portable and 100160 @ VGS = 4.5V 15
6.4. Size:291K analog power
am20n10-180d.pdf
Analog Power AM20N10-180DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)180 @ VGS = 10V14 Low thermal impedance 100190 @ VGS = 4.5V13 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2
6.5. Size:850K cn vbsemi
am20n10-130d.pdf
AM20N10-130Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
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