All MOSFET. AM20P02-60D Datasheet

 

AM20P02-60D Datasheet and Replacement


   Type Designator: AM20P02-60D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: TO-252
 

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AM20P02-60D Datasheet (PDF)

 ..1. Size:139K  analog power
am20p02-60d.pdf pdf_icon

AM20P02-60D

Analog Power AM20P02-60DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-20converters, power management in

 6.1. Size:139K  analog power
am20p02-99d.pdf pdf_icon

AM20P02-60D

Analog Power AM20P02-99DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (m)ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17-20converters, power management i

 8.1. Size:153K  analog power
am20p06-135d.pdf pdf_icon

AM20P02-60D

Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc

 8.2. Size:140K  analog power
am20p03-60d.pdf pdf_icon

AM20P02-60D

Analog Power AM20P03-60DP-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24-32battery-powered products s

Datasheet: AM20N10-130D , AM20N10-180D , AM20N10-250D , AM20N10-250DE , AM20N10-350D , AM20N15-250B , AM20N15-250D , AM20N20-125D , AON7506 , AM20P02-99D , AM20P03-60D , AM20P03-60I , AM20P04-60D , AM20P06-135D , AM20P06-175I , AM20P10-250D , AM20P15-160D .

History: PJA3431 | SPP03N60C3 | 2SK764 | CJQ4406 | TSM2312CX | 2N7002NXBK | IRHMS67160

Keywords - AM20P02-60D MOSFET datasheet

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