AM20P02-99D MOSFET. Datasheet pdf. Equivalent
Type Designator: AM20P02-99D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 12 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.118 Ohm
Package: TO-252
AM20P02-99D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM20P02-99D Datasheet (PDF)
am20p02-99d.pdf
Analog Power AM20P02-99DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (m)ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17-20converters, power management i
am20p02-60d.pdf
Analog Power AM20P02-60DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-20converters, power management in
am20p06-135d.pdf
Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc
am20p03-60d.pdf
Analog Power AM20P03-60DP-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24-32battery-powered products s
am20p06-175i.pdf
Analog Power AM20P06-175IP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)175 @ VGS = -10V -14 Low thermal impedance -60200 @ VGS = -4.5V -13 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
am20p03-60i.pdf
Analog Power AM20P03-60IP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24-30converters, power management in
am20p04-60d.pdf
Analog Power AM20P04-60DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22converters and power management in portable and -40battery-powered products
am20p06-135.pdf
AM20P06-135www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
