IRLZ14
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLZ14
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 43
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 8.4(max)
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO220
IRLZ14
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLZ14
Datasheet (PDF)
..1. Size:253K international rectifier
irlz14pbf.pdf 
PD - 95457IRLZ14PbF Lead-Free6/23/04Document Number: 91325 www.vishay.com1IRLZ14PbFDocument Number: 91325 www.vishay.com2IRLZ14PbFDocument Number: 91325 www.vishay.com3IRLZ14PbFDocument Number: 91325 www.vishay.com4IRLZ14PbFDocument Number: 91325 www.vishay.com5IRLZ14PbFDocument Number: 91325 www.vishay.com6IRLZ14PbF+Circuit Layout Consider
..3. Size:1084K vishay
irlz14 sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
..4. Size:1086K vishay
irlz14pbf sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
0.1. Size:291K international rectifier
irlz14s irlz14l.pdf
PD - 9.903AIRLZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175C Operating Temperature RDS(on) = 0.20G Fast SwitchingID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
0.2. Size:209K samsung
irlz14a.pdf
IRLZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute
0.3. Size:310K vishay
irlz14l irlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
0.4. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
0.5. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
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