IRLZ14 Datasheet. Specs and Replacement
Type Designator: IRLZ14 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220
IRLZ14 substitution
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IRLZ14 datasheet
irlz14pbf.pdf
PD - 95457 IRLZ14PbF Lead-Free 6/23/04 Document Number 91325 www.vishay.com 1 IRLZ14PbF Document Number 91325 www.vishay.com 2 IRLZ14PbF Document Number 91325 www.vishay.com 3 IRLZ14PbF Document Number 91325 www.vishay.com 4 IRLZ14PbF Document Number 91325 www.vishay.com 5 IRLZ14PbF Document Number 91325 www.vishay.com 6 IRLZ14PbF + Circuit Layout Consider... See More ⇒
irlz14 sihlz14.pdf
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D ... See More ⇒
irlz14pbf sihlz14.pdf
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D ... See More ⇒
Detailed specifications: IRLW620A, IRLW630A, IRLW640A, IRLWZ14A, IRLWZ24A, IRLWZ34A, IRLWZ44A, IRLZ10, IRFB4227, IRLZ14A, IRLZ20, IRLZ24, IRLZ24A, IRLZ24N, IRLZ24NL, IRLZ24NS, IRLZ30
Keywords - IRLZ14 MOSFET specs
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