All MOSFET. AM2305PE Datasheet

 

AM2305PE Datasheet and Replacement


   Type Designator: AM2305PE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT-23
 

 AM2305PE substitution

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AM2305PE Datasheet (PDF)

 ..1. Size:299K  analog power
am2305pe.pdf pdf_icon

AM2305PE

Analog Power AM2305PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

 ..2. Size:2435K  cn vbsemi
am2305pe.pdf pdf_icon

AM2305PE

AM2305PEwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

 7.1. Size:286K  analog power
am2305p.pdf pdf_icon

AM2305PE

Analog Power AM2305PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci

 8.1. Size:468K  ait semi
am2305.pdf pdf_icon

AM2305PE

AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m@V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m@V = -4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2A, R = 85m@V = -2.5V DS(ON)

Datasheet: AM2302N , AM2302NE , AM2303 , AM2303P , AM2304 , AM2304N , AM2305 , AM2305P , IRFB31N20D , AM2306 , AM2306N , AM2306NE , AM2307PE , AM2308 , AM2308N , AM2308NE , AM2310N .

History: AM7500C | AUIRFP4227 | SSM3K56CT | IXTJ3N150 | VBZE04N03 | AM90N06-04M2B | 2SK1928

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