All MOSFET. AM2306NE Datasheet

 

AM2306NE Datasheet and Replacement


   Type Designator: AM2306NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT-23
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AM2306NE Datasheet (PDF)

 ..1. Size:206K  analog power
am2306ne.pdf pdf_icon

AM2306NE

Analog Power AM2306NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in

 7.1. Size:188K  analog power
am2306n.pdf pdf_icon

AM2306NE

Analog Power AM2306NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p

 8.1. Size:443K  ait semi
am2306.pdf pdf_icon

AM2306NE

AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m(typ.)@V = 10V DS(ON) GSmode power field effect transistor is produced using 30V/2.8A, R = 55m(typ.)@V = 4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell desi

 9.1. Size:290K  analog power
am2308ne.pdf pdf_icon

AM2306NE

Analog Power AM2308NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA

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History: DMN3025LFG | HLML6401 | HSS3N10 | APQ25SN06AB | VS3698AE | SWF16N65D | AP85T03GH-HF

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