AM2314NE PDF and Equivalents Search

 ..1. Size:293K  analog power
 am2314ne.pdf

Analog Power AM2314NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 4.5V 5.3 Low thermal impedance 20 44 @ VGS = 2.5V 4.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM... See More ⇒

 7.1. Size:168K  analog power
 am2314n.pdf

Analog Power AM2314N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6 power management circuitry. Typical 20 applications are power switch, power 0.044 @ VGS = 2.5V ... See More ⇒

 9.1. Size:239K  analog power
 am2313p.pdf

Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low VDS (V) rDS(on) ( )ID (A) rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2 -60 for use in power management circuitry. 20 @ VGS = -4.5V -0.12 Typical applications are voltage contro... See More ⇒

 9.2. Size:238K  analog power
 am2310n.pdf

Analog Power AM2310N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ( )ID (A) conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2 for use in power management circuitry. 30 0.082 @ VGS = 2.5V 2.0 Typical applications are lower voltage ... See More ⇒

 9.3. Size:286K  analog power
 am2319p.pdf

Analog Power AM2319P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and VDS (V) rDS(on) ( )ID (A) conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1 -30 Typical applications are voltage control 0.30 @ VGS = -4.... See More ⇒

 9.4. Size:285K  analog power
 am2318n.pdf

Analog Power AM2318N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = 10V 2.4 Low thermal impedance 30 250 @ VGS = 4.5V 1.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU... See More ⇒

 9.5. Size:236K  analog power
 am2317p.pdf

Analog Power AM2317P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0 -30 applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9 power management in portable... See More ⇒

 9.6. Size:290K  analog power
 am2312n.pdf

Analog Power AM2312N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 10 @ VGS = 4.5V 9.4 Low thermal impedance 20 13 @ VGS = 2.5V 8.2 Fast switching speed Typical Applications SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN... See More ⇒

 9.7. Size:527K  ait semi
 am2319.pdf

AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m (max.) @ V = -10V DS(ON) GS R = 120m (max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM... See More ⇒

 9.8. Size:668K  ait semi
 am2317.pdf

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m (typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using -20V/-4.1A,R =45m (typ.)@V =-2.5V DS(ON) GS high cell density advanced trench technology. -20V/-3.6A,R =53m (t... See More ⇒

 9.9. Size:848K  cn vbsemi
 am2319p-t1.pdf

AM2319P-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-... See More ⇒