AM2317 Specs and Replacement

Type Designator: AM2317

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.8 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT-23

AM2317 substitution

- MOSFET ⓘ Cross-Reference Search

 

AM2317 datasheet

 ..1. Size:668K  ait semi
am2317.pdf pdf_icon

AM2317

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m (typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using -20V/-4.1A,R =45m (typ.)@V =-2.5V DS(ON) GS high cell density advanced trench technology. -20V/-3.6A,R =53m (t... See More ⇒

 0.1. Size:236K  analog power
am2317p.pdf pdf_icon

AM2317

Analog Power AM2317P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0 -30 applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9 power management in portable... See More ⇒

 9.1. Size:168K  analog power
am2314n.pdf pdf_icon

AM2317

Analog Power AM2314N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6 power management circuitry. Typical 20 applications are power switch, power 0.044 @ VGS = 2.5V ... See More ⇒

 9.2. Size:239K  analog power
am2313p.pdf pdf_icon

AM2317

Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low VDS (V) rDS(on) ( )ID (A) rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2 -60 for use in power management circuitry. 20 @ VGS = -4.5V -0.12 Typical applications are voltage contro... See More ⇒

Detailed specifications: AM2308, AM2308N, AM2308NE, AM2310N, AM2312N, AM2313P, AM2314N, AM2314NE, IRFZ46N, AM2317P, AM2318N, AM2319, AM2319P, AM2320NE, AM2321P, AM2321PE, AM2322N

Keywords - AM2317 MOSFET specs

 AM2317 cross reference

 AM2317 equivalent finder

 AM2317 pdf lookup

 AM2317 substitution

 AM2317 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.