IRLZ20 Specs and Replacement
Type Designator: IRLZ20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220
- MOSFET ⓘ Cross-Reference Search
IRLZ20 datasheet
9.1. Size:109K international rectifier
irlz24n.pdf 
PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible... See More ⇒
9.2. Size:160K international rectifier
irlz24s.pdf
Document Number 90416 www.vishay.com 1475 Document Number 90416 www.vishay.com 1476 Document Number 90416 www.vishay.com 1477 Document Number 90416 www.vishay.com 1478 Document Number 90416 www.vishay.com 1479 Document Number 90416 www.vishay.com 1480 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as ... See More ⇒
9.4. Size:197K international rectifier
irlz24ns irlz24nl.pdf
PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... See More ⇒
9.5. Size:301K international rectifier
irlz24nlpbf irlz24nspbf.pdf
PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175 C Operating Temperature RDS(on) = 0.06 l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize... See More ⇒
9.6. Size:1797K international rectifier
irlz24pbf.pdf
PD- 95972 IRLZ24PbF Lead-Free 12/20/04 Document Number 91326 www.vishay.com 1 IRLZ24PbF Document Number 91326 www.vishay.com 2 IRLZ24PbF Document Number 91326 www.vishay.com 3 IRLZ24PbF Document Number 91326 www.vishay.com 4 IRLZ24PbF Document Number 91326 www.vishay.com 5 IRLZ24PbF Document Number 91326 www.vishay.com 6 IRLZ24PbF Peak Diode Recovery dv/dt ... See More ⇒
9.7. Size:271K international rectifier
auirlz24nl auirlz24ns.pdf
AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175 C Operating Temperature RDS(on) max. 0.06 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application... See More ⇒
9.8. Size:2577K international rectifier
irlz24npbf.pdf
PD - 94998 IRLZ24NPbF Lead-Free www.irf.com 1 2/11/04 IRLZ24NPbF 2 www.irf.com IRLZ24NPbF www.irf.com 3 IRLZ24NPbF 4 www.irf.com IRLZ24NPbF www.irf.com 5 IRLZ24NPbF 6 www.irf.com IRLZ24NPbF www.irf.com 7 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13... See More ⇒
9.9. Size:213K samsung
irlz24a.pdf
IRLZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute... See More ⇒
9.11. Size:1747K vishay
irlz24pbf irlz24 sihlz24.pdf
IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single ... See More ⇒
9.12. Size:1744K vishay
irlz24 sihlz24.pdf
IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single ... See More ⇒
9.13. Size:308K vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12 ... See More ⇒
9.14. Size:334K vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12 ... See More ⇒
9.15. Size:1130K cn vbsemi
irlz24npbf.pdf
IRLZ24NPBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di... See More ⇒
9.16. Size:246K inchange semiconductor
irlz24n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ24N IIRLZ24N FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM ... See More ⇒
Detailed specifications: IRLW640A, IRLWZ14A, IRLWZ24A, IRLWZ34A, IRLWZ44A, IRLZ10, IRLZ14, IRLZ14A, 10N60, IRLZ24, IRLZ24A, IRLZ24N, IRLZ24NL, IRLZ24NS, IRLZ30, IRLZ34, IRLZ34A
Keywords - IRLZ20 MOSFET specs
IRLZ20 cross reference
IRLZ20 equivalent finder
IRLZ20 pdf lookup
IRLZ20 substitution
IRLZ20 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
