AM2321P PDF and Equivalents Search

 ..1. Size:308K  analog power
 am2321p.pdf

Analog Power AM2321P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 79 @ VGS = -4.5V -4.1 Low thermal impedance -20 110 @ VGS = -2.5V -3.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI... See More ⇒

 ..2. Size:1479K  cn vbsemi
 am2321p.pdf

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 0.1. Size:81K  analog power
 am2321pe.pdf

Analog Power AM2321PE P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1 -20 battery-powered product... See More ⇒

 9.1. Size:312K  analog power
 am2320ne.pdf

Analog Power AM2320NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 18 @ VGS = 4.5V 7.0 Low thermal impedance 20 21 @ VGS = 2.5V 6.5 Fast switching speed SOT-23 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT... See More ⇒

 9.2. Size:127K  analog power
 am2325p.pdf

Analog Power AM2325P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A) power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6 applications are DC-DC converters and power management in portable and -20 0.089 @ VGS = -2.5V ... See More ⇒

 9.3. Size:133K  analog power
 am2328n.pdf

Analog Power AM2328N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9 power management circuitry. Typical 20 applications are power switch, power 0.035 @ VGS = 2.5V ... See More ⇒

 9.4. Size:175K  analog power
 am2328ne.pdf

Analog Power AM2328NE N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.5 battery-powered products su... See More ⇒

 9.5. Size:201K  analog power
 am2324n.pdf

Analog Power AM2324N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal 0.047 @ VGS = 4.5V 4.3 power loss and heat dissipation. Typical 20 0.055@ VGS = 2.5V 4.0 applications are DC-DC converters and power management in portable and ... See More ⇒

 9.6. Size:209K  analog power
 am2327p.pdf

Analog Power AM2327P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) (OHM) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 0.052 @ VGS = -4.5V -3.6 circuitry. Typical applications are DC-DC converters, power management in po... See More ⇒

 9.7. Size:133K  analog power
 am2329p.pdf

Analog Power AM2329P P-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.112 @ VGS = 10 V 2.5 power management circuitry. Typical -30 applications are power switch, power 0.172 @ VGS = 4.5V ... See More ⇒

 9.8. Size:245K  analog power
 am2323p.pdf

Analog Power AM2323P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A) rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9 dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -... See More ⇒

 9.9. Size:241K  analog power
 am2322n.pdf

Analog Power AM2322N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ( )ID (A) converters and power management in portable and 0.085 @ VGS = 10V 2.5 battery-powered products such... See More ⇒

 9.10. Size:134K  analog power
 am2326n.pdf

Analog Power AM2326N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low VDS (V) rDS(on) ( )ID (A) rDS(on) assures minimal power loss and 0.070 @ VGS = 4.5V 2.2 conserves energy, making this device ideal for use in power management circuitry. 20 0.080@ VGS = 2.5V 2.0 Typical applications are DC-DC 0.120@ VG... See More ⇒