AM2342NE Specs and Replacement

Type Designator: AM2342NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: SOT-23

AM2342NE substitution

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AM2342NE datasheet

 ..1. Size:172K  analog power
am2342ne.pdf pdf_icon

AM2342NE

Analog Power AM2342NE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2 converters and power management in portable and 40 battery-powered products s... See More ⇒

 7.1. Size:26K  analog power
am2342n.pdf pdf_icon

AM2342NE

Analog Power AM2342N N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2 GS converters and power management in portable and 40 battery-powered products s... See More ⇒

 8.1. Size:330K  ait semi
am2342.pdf pdf_icon

AM2342NE

AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement 20V/5.0A, R =25m (typ.)@V =4.5V DS(ON) GS mode power field effect transistor is produced using 20V/4.5A, R =34m (typ.)@V =2.5V DS(ON) GS high cell density. Advanced trench technology to 20V/4.0A, R =48m (typ.)@V =1.8... See More ⇒

 9.1. Size:134K  analog power
am2341p.pdf pdf_icon

AM2342NE

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ( )ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power ... See More ⇒

Detailed specifications: AM2336N, AM2337P, AM2339P, AM2340N, AM2340NE, AM2341P, AM2342, AM2342N, IRF640N, AM2343P, AM2343PE, AM2344N, AM2345P, AM2345PE, AM2347P, AM2358N, AM2358NE

Keywords - AM2342NE MOSFET specs

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