All MOSFET. AM2347P Datasheet

 

AM2347P MOSFET. Datasheet pdf. Equivalent

Type Designator: AM2347P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 4.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: SOT-23

AM2347P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM2347P Datasheet (PDF)

1.1. am2347p.pdf Size:303K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2347P P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 39 @ VGS = -10V -4.8 • Low thermal impedance -40 55 @ VGS = -4.5V -4.0 • Fast switching speed SOT-23 Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS

5.1. am2343p.pdf Size:283K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2343P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 57 @ VGS = -10V -3.9 • Low thermal impedance -30 89 @ VGS = -4.5V -3.2 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

5.2. am2340n.pdf Size:280K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2340N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 43 @ VGS = 10V 5.2 • Low thermal impedance 40 64 @ VGS = 4.5V 3.7 • Fast switching speed Typical Applications: SOT-23 • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE

 5.3. am2343pe.pdf Size:287K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2343PE P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 57 @ VGS = -10V -3.9 • Low thermal impedance -30 89 @ VGS = -4.5V -3.2 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

5.4. am2342n.pdf Size:26K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2342N N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2 GS converters and power management in portable and 40 battery-powered products s

 5.5. am2345p.pdf Size:27K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2345P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A) applications are DC-DC converters and 0.164 @ V = -10 V -3.2 GS power management in portable and -40 battery-powered pr

5.6. am2345pe.pdf Size:176K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2345PE P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (Ω)ID (A) applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2 power management in portable and -40 battery-powered pr

5.7. am2342.pdf Size:330K _upd-mosfet

AM2347P
AM2347P

AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement  20V/5.0A, R =25mΩ(typ.)@V =4.5V DS(ON) GS mode power field effect transistor is produced using  20V/4.5A, R =34mΩ(typ.)@V =2.5V DS(ON) GS high cell density. Advanced trench technology to  20V/4.0A, R =48mΩ(typ.)@V =1.8

5.8. am2342ne.pdf Size:172K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2342NE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω)ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2 converters and power management in portable and 40 battery-powered products s

5.9. am2340ne.pdf Size:170K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2340NE N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m(Ω)ID (A) rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2 dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2 batter

5.10. am2341p.pdf Size:134K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) (Ω)ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power

5.11. am2344n.pdf Size:286K _upd-mosfet

AM2347P
AM2347P

Analog Power AM2344N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 26 @ VGS = 10V 5.8 • Low thermal impedance 40 35 @ VGS = 4.5V 5.0 • Fast switching speed SOT-23 Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI

Datasheet: AM2342 , AM2342N , AM2342NE , AM2343P , AM2343PE , AM2344N , AM2345P , AM2345PE , IRF520 , AM2358N , AM2358NE , AM2359P , AM2359PE , AM2360N , AM2361P , AM2362N , AM2370N .

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