All MOSFET. AM2362N Datasheet

 

AM2362N Datasheet and Replacement


   Type Designator: AM2362N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT-23
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AM2362N Datasheet (PDF)

 ..1. Size:284K  analog power
am2362n.pdf pdf_icon

AM2362N

Analog Power AM2362NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)27 @ VGS = 10V5.7 Low thermal impedance 6033 @ VGS = 4.5V5.2 Fast switching speed Typical Applications: SOT-23 DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

 9.1. Size:94K  analog power
am2360n.pdf pdf_icon

AM2362N

Analog Power AM2360NN-Channel 55V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.160 @ VGS = 4.5 V 2.4battery-powered products su

 9.2. Size:288K  analog power
am2361p.pdf pdf_icon

AM2362N

Analog Power AM2361PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)210 @ VGS = -10V -3.4 Low thermal impedance -60250 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

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History: IXFV12N80P | NVD5806N | CED05N8 | AON6794 | IRLR024 | BUZ84 | BL10N70-A

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