IRLZ24NS PDF and Equivalents Search

 

IRLZ24NS PDF Specs and Replacement


   Type Designator: IRLZ24NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   Qg ⓘ - Total Gate Charge: 15(max) nC
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO263
 

 IRLZ24NS substitution

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IRLZ24NS PDF Specs

 ..1. Size:197K  international rectifier
irlz24ns irlz24nl.pdf pdf_icon

IRLZ24NS

PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... See More ⇒

 ..2. Size:301K  international rectifier
irlz24nlpbf irlz24nspbf.pdf pdf_icon

IRLZ24NS

PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175 C Operating Temperature RDS(on) = 0.06 l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize... See More ⇒

 0.1. Size:271K  international rectifier
auirlz24nl auirlz24ns.pdf pdf_icon

IRLZ24NS

AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175 C Operating Temperature RDS(on) max. 0.06 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application... See More ⇒

 7.1. Size:109K  international rectifier
irlz24n.pdf pdf_icon

IRLZ24NS

PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible... See More ⇒

Detailed specifications: IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , IRLZ24N , IRLZ24NL , 8205A , IRLZ30 , IRLZ34 , IRLZ34A , IRLZ34N , IRLZ34NL , IRLZ34NS , IRLZ40 , IRLZ44 .

Keywords - IRLZ24NS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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