IRLZ24NS PDF Specs and Replacement
Type Designator: IRLZ24NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
Qg ⓘ - Total Gate Charge: 15(max) nC
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO263
IRLZ24NS substitution
IRLZ24NS PDF Specs
irlz24ns irlz24nl.pdf
PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... See More ⇒
irlz24nlpbf irlz24nspbf.pdf
PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175 C Operating Temperature RDS(on) = 0.06 l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize... See More ⇒
auirlz24nl auirlz24ns.pdf
AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175 C Operating Temperature RDS(on) max. 0.06 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application... See More ⇒
irlz24n.pdf
PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible... See More ⇒
Detailed specifications: IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , IRLZ24N , IRLZ24NL , 8205A , IRLZ30 , IRLZ34 , IRLZ34A , IRLZ34N , IRLZ34NL , IRLZ34NS , IRLZ40 , IRLZ44 .
Keywords - IRLZ24NS MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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