All MOSFET. IRFBC40APBF Datasheet

 

IRFBC40APBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBC40APBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 136 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220AB

IRFBC40APBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFBC40APBF Datasheet (PDF)

1.1. irfbc40apbf.pdf Size:189K _upd-mosfet

IRFBC40APBF
IRFBC40APBF

 SMPS MOSFET IRFBC40APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2Ω 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Aval

2.1. irfbc40aspbf.pdf Size:387K _upd-mosfet

IRFBC40APBF
IRFBC40APBF

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ()VGS = 10 V 1.2 • Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 • Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 • Fully Characterized Capacitance and Avalanche

2.2. irfbc40a.pdf Size:200K _international_rectifier

IRFBC40APBF
IRFBC40APBF

SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2? 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 2.3. irfbc40as.pdf Size:609K _international_rectifier

IRFBC40APBF
IRFBC40APBF

PD - 95545 IRFBC40ASPbF Lead-Free 7/22/04 Document Number: 91113 www.vishay.com 1 IRFBC40ASPbF Document Number: 91113 www.vishay.com 2 IRFBC40ASPbF Document Number: 91113 www.vishay.com 3 IRFBC40ASPbF Document Number: 91113 www.vishay.com 4 IRFBC40ASPbF Document Number: 91113 www.vishay.com 5 IRFBC40ASPbF Document Number: 91113 www.vishay.com 6 IRFBC40ASPbF Document N

2.4. irfbc40as sihfbc40as.pdf Size:361K _vishay

IRFBC40APBF
IRFBC40APBF

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (?)VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche Voltage Con

 2.5. irfbc40a sihfbc40a.pdf Size:208K _vishay

IRFBC40APBF
IRFBC40APBF

IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) (?)VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 42 COMPLIANT Ruggedness Qgs (nC) 10 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configuration Single

Datasheet: SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , IRFP260N , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .

 
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