IRFBC40ASPBF Specs and Replacement

Type Designator: IRFBC40ASPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 136 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-263

IRFBC40ASPBF substitution

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IRFBC40ASPBF datasheet

 ..1. Size:609K  international rectifier
irfbc40aspbf.pdf pdf_icon

IRFBC40ASPBF

PD - 95545 IRFBC40ASPbF Lead-Free 7/22/04 Document Number 91113 www.vishay.com 1 IRFBC40ASPbF Document Number 91113 www.vishay.com 2 IRFBC40ASPbF Document Number 91113 www.vishay.com 3 IRFBC40ASPbF Document Number 91113 www.vishay.com 4 IRFBC40ASPbF Document Number 91113 www.vishay.com 5 IRFBC40ASPbF Document Number 91113 www.vishay.com 6 IRFBC40ASPbF Docum... See More ⇒

 ..2. Size:387K  vishay
irfbc40aspbf sihfbc40as.pdf pdf_icon

IRFBC40ASPBF

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche... See More ⇒

 5.1. Size:361K  vishay
irfbc40as sihfbc40as.pdf pdf_icon

IRFBC40ASPBF

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche... See More ⇒

 5.2. Size:278K  inchange semiconductor
irfbc40as.pdf pdf_icon

IRFBC40ASPBF

iscN-Channel MOSFET Transistor IRFBC40AS FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

Detailed specifications: AM2381P, AM2390N, AM2391P, AM2392N, AM2394NE, AM2398N, AM2398NE, IRFBC40APBF, SKD502T, IRFBC40LC, IRFBC40LCPBF, IRFBC40LPBF, IRFBC40PBF, IRFBC40SPBF, IRFBE20PBF, IRFBE30L, IRFBE30LPBF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs