IRFBC40LC
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFBC40LC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO-220AB
IRFBC40LC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFBC40LC
Datasheet (PDF)
..2. Size:209K vishay
irfbc40lc sihfbc40lc.pdf 
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
..3. Size:210K vishay
irfbc40lc irfbc40lcpbf sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
6.1. Size:377K international rectifier
irfbc40spbf irfbc40lpbf.pdf
PD - 95546IRFBC40S/LPbF Lead-Free7/22/04Document Number: 91116 www.vishay.com1IRFBC40S/LPbFDocument Number: 91116 www.vishay.com2IRFBC40S/LPbFDocument Number: 91116 www.vishay.com3IRFBC40S/LPbFDocument Number: 91116 www.vishay.com4IRFBC40S/LPbFDocument Number: 91116 www.vishay.com5IRFBC40S/LPbFDocument Number: 91116 www.vishay.com6IRFBC40S/LPbF
6.2. Size:350K international rectifier
irfbc40s irfbc40l.pdf
PD - 91016AIRFBC40S/LHEXFET Power MOSFET Surface Mount (IRFBC40S)D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt RatingRDS(on) = 1.2 150C Operating TemperatureG Fast SwitchingID = 6.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer with thebes
6.3. Size:264K vishay
irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
6.4. Size:986K vishay
irfbc40lpbf.pdf
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC40S/SiHFBC40S)VDS (V) 600Available Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)RDS(on) ()VGS = 10 V 1.2RoHS* Available in Tape and Reel (IRFBC20S,COMPLIANTQg (Max.) (nC) 60SiHFBC20S)Qgs (nC) 8.3 Dynamic dV/dt RatingQgd (nC) 30 15
6.5. Size:322K inchange semiconductor
irfbc40l.pdf
iscN-Channel MOSFET Transistor IRFBC40LFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
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