All MOSFET. IRFBC40LCPBF Datasheet

 

IRFBC40LCPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBC40LCPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220AB

IRFBC40LCPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFBC40LCPBF Datasheet (PDF)

1.1. irfbc40lc irfbc40lcpbf.pdf Size:210K _upd-mosfet

IRFBC40LCPBF
IRFBC40LCPBF

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 600 • Reduced Gate Drive Requirement Available RDS(on) ()VGS = 10 V 1.2 • Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated Conf

1.2. irfbc40lc.pdf Size:167K _international_rectifier

IRFBC40LCPBF
IRFBC40LCPBF

 1.3. irfbc40lc sihfbc40lc.pdf Size:209K _vishay

IRFBC40LCPBF
IRFBC40LCPBF

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Configuration Single

Datasheet: PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , IRF630 , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T .

 
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