All MOSFET. IRFBC40LCPBF Datasheet

 

IRFBC40LCPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBC40LCPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220AB

IRFBC40LCPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBC40LCPBF Datasheet (PDF)

1.1. irfbc40lc irfbc40lcpbf.pdf Size:210K _upd-mosfet

IRFBC40LCPBF
IRFBC40LCPBF

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 600 • Reduced Gate Drive Requirement Available RDS(on) ()VGS = 10 V 1.2 • Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated Conf

1.2. irfbc40lc.pdf Size:167K _international_rectifier

IRFBC40LCPBF
IRFBC40LCPBF

 1.3. irfbc40lc sihfbc40lc.pdf Size:209K _vishay

IRFBC40LCPBF
IRFBC40LCPBF

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Configuration Single

Datasheet: AM2391P , AM2392N , AM2394NE , AM2398N , AM2398NE , IRFBC40APBF , IRFBC40ASPBF , IRFBC40LC , CEP83A3 , IRFBC40LPBF , IRFBC40PBF , IRFBC40SPBF , IRFBE20PBF , IRFBE30L , IRFBE30LPBF , IRFBE30PBF , IRFBE30S .

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