All MOSFET. IRFBC40PBF Datasheet

 

IRFBC40PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBC40PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220AB

IRFBC40PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBC40PBF Datasheet (PDF)

1.1. irfbc40pbf.pdf Size:1617K _upd-mosfet

IRFBC40PBF
IRFBC40PBF

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 600 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 1.2 RoHS* • Fast Switching Qg (Max.) (nC) 60 COMPLIANT • Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D D

1.2. irfbc40pbf.pdf Size:2166K _international_rectifier

IRFBC40PBF
IRFBC40PBF

PD - 94955 IRFBC40PbF Lead-Free 01/29/04 Document Number: 91115 www.vishay.com 1 IRFBC40PbF Document Number: 91115 www.vishay.com 2 IRFBC40PbF Document Number: 91115 www.vishay.com 3 IRFBC40PbF Document Number: 91115 www.vishay.com 4 IRFBC40PbF Document Number: 91115 www.vishay.com 5 IRFBC40PbF Document Number: 91115 www.vishay.com 6 IRFBC40PbF TO-220AB Package Outlin

 3.1. irfbc40apbf.pdf Size:189K _upd-mosfet

IRFBC40PBF
IRFBC40PBF

 SMPS MOSFET IRFBC40APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2Ω 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Aval

3.2. irfbc40lpbf.pdf Size:986K _upd-mosfet

IRFBC40PBF
IRFBC40PBF

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface Mount (IRFBC40S/SiHFBC40S) VDS (V) 600 Available • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) RDS(on) (Ω)VGS = 10 V 1.2 RoHS* • Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 SiHFBC20S) Qgs (nC) 8.3 • Dynamic dV/dt Rating Qgd (nC) 30 • 15

 3.3. irfbc40lc irfbc40lcpbf.pdf Size:210K _upd-mosfet

IRFBC40PBF
IRFBC40PBF

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 600 • Reduced Gate Drive Requirement Available RDS(on) ()VGS = 10 V 1.2 • Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated Conf

3.4. irfbc40aspbf.pdf Size:387K _upd-mosfet

IRFBC40PBF
IRFBC40PBF

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ()VGS = 10 V 1.2 • Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 • Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 • Fully Characterized Capacitance and Avalanche

 3.5. irfbc40spbf.pdf Size:290K _upd-mosfet

IRFBC40PBF
IRFBC40PBF

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition • Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) ()VGS = 10 V 1.2 • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 • Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 • Dynamic dV/dt

3.6. irfbc40.pdf Size:288K _st

IRFBC40PBF
IRFBC40PBF

IRFBC40 N - CHANNEL 600V - 1.0 ? - 6.2 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRFBC40 600 V < 1.2 ? 6.2 A TYPICAL R = 1.0 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH OVERLAY? process. T

3.7. irfbc40a.pdf Size:200K _international_rectifier

IRFBC40PBF
IRFBC40PBF

SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2? 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

3.8. irfbc40as.pdf Size:609K _international_rectifier

IRFBC40PBF
IRFBC40PBF

PD - 95545 IRFBC40ASPbF Lead-Free 7/22/04 Document Number: 91113 www.vishay.com 1 IRFBC40ASPbF Document Number: 91113 www.vishay.com 2 IRFBC40ASPbF Document Number: 91113 www.vishay.com 3 IRFBC40ASPbF Document Number: 91113 www.vishay.com 4 IRFBC40ASPbF Document Number: 91113 www.vishay.com 5 IRFBC40ASPbF Document Number: 91113 www.vishay.com 6 IRFBC40ASPbF Document N

3.9. irfbc40lc.pdf Size:167K _international_rectifier

IRFBC40PBF
IRFBC40PBF

3.10. irfbc40.pdf Size:178K _international_rectifier

IRFBC40PBF
IRFBC40PBF

3.11. irfbc40s.pdf Size:350K _international_rectifier

IRFBC40PBF
IRFBC40PBF

PD - 91016A IRFBC40S/L HEXFET Power MOSFET Surface Mount (IRFBC40S) D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating RDS(on) = 1.2? 150C Operating Temperature G Fast Switching ID = 6.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer with the best combi

3.12. irfbc40s-l.pdf Size:377K _international_rectifier

IRFBC40PBF
IRFBC40PBF

PD - 95546 IRFBC40S/LPbF Lead-Free 7/22/04 Document Number: 91116 www.vishay.com 1 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 2 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 3 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 4 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 5 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 6 IRFBC40S/LPbF Doc

3.13. irfbc40lc sihfbc40lc.pdf Size:209K _vishay

IRFBC40PBF
IRFBC40PBF

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Configuration Single

3.14. irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf Size:264K _vishay

IRFBC40PBF
IRFBC40PBF

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) (?)VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt Rating Qgd (n

3.15. irfbc40as sihfbc40as.pdf Size:361K _vishay

IRFBC40PBF
IRFBC40PBF

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (?)VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche Voltage Con

3.16. irfbc40 sihfbc40.pdf Size:1614K _vishay

IRFBC40PBF
IRFBC40PBF

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2

3.17. irfbc40a sihfbc40a.pdf Size:208K _vishay

IRFBC40PBF
IRFBC40PBF

IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) (?)VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 42 COMPLIANT Ruggedness Qgs (nC) 10 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configuration Single

3.18. irfbc40 irfbc42.pdf Size:73K _harris_semi

IRFBC40PBF
IRFBC40PBF

IRFBC40, Semiconductor IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 1.2Ω and 1.6Ω MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown

Datasheet: AM2394NE , AM2398N , AM2398NE , IRFBC40APBF , IRFBC40ASPBF , IRFBC40LC , IRFBC40LCPBF , IRFBC40LPBF , IRF1405 , IRFBC40SPBF , IRFBE20PBF , IRFBE30L , IRFBE30LPBF , IRFBE30PBF , IRFBE30S , IRFBE30SPBF , IRFBF20PBF .

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