IRFD024PBF Datasheet and Replacement
Type Designator: IRFD024PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DIP-4
IRFD024PBF substitution
IRFD024PBF Datasheet (PDF)
irfd024pbf sihfd024.pdf

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
irfd024 sihfd024.pdf

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
irfd020 sihfd020.pdf

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
Datasheet: IRFBF30SPBF , IRFBG20PBF , IRFBG30PBF , IRFD010 , IRFD012 , IRFD014PBF , IRFD020 , IRFD020PBF , SKD502T , IRFD110PBF , IRFD113PBF , IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFD214PBF , IRFD220PBF , IRFD224PBF .
History: PNMTOF600V4 | AOT12N60 | AP9962AGD
Keywords - IRFD024PBF MOSFET datasheet
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History: PNMTOF600V4 | AOT12N60 | AP9962AGD



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