All MOSFET. AM30N02-40D Datasheet

 

AM30N02-40D Datasheet and Replacement


   Type Designator: AM30N02-40D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO-252
 

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AM30N02-40D Datasheet (PDF)

 ..1. Size:138K  analog power
am30n02-40d.pdf pdf_icon

AM30N02-40D

Analog Power AM30N02-40DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34circuitry. Typical applications are PWMDC-DC 2043 @ VGS = 2.5V 22converters

 6.1. Size:139K  analog power
am30n02-59d.pdf pdf_icon

AM30N02-40D

Analog Power AM30N02-59DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24circuitry. Typical applications are PWMDC-DC 2088 @ VGS = 2.5V 20converters

 8.1. Size:153K  analog power
am30n03-59d.pdf pdf_icon

AM30N02-40D

Analog Power AM30N03-59DN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24circuitry. Typical applications are PWMDC-DC 3088 @ VGS = 4.5V 20converters,

 8.2. Size:203K  analog power
am30n06-39ie.pdf pdf_icon

AM30N02-40D

Analog Power AM30N06-39IEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30converters and power management in portable and 6050 @ VGS = 4.5V 26batt

Datasheet: IRFH7545 , IRFH7787 , AM25P03-60D , AM2N7002 , AM2N7002DW , AM2N7002K , AM2N7002W , AM3015 , IRF1407 , AM30N02-59D , AM30N03-40D , AM30N03-59D , AM30N06-39D , AM30N06-39IE , AM30N06-65DA , AM30N08-80D , AM30N10-50D .

History: BL3N150-A | DMG8880LSS | IXFV110N10P | CS65N20-30 | SQM90142E | IPB120N08S4-03 | C3M0065100K

Keywords - AM30N02-40D MOSFET datasheet

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