IRLZ44NS Datasheet and Replacement
Type Designator: IRLZ44NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO263
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IRLZ44NS Datasheet (PDF)
irlz44ns irlz44nl.pdf

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription
irlz44nlpbf irlz44nspbf.pdf

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription
irlz44n.pdf

PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan
irlz44npbf.pdf

PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
Datasheet: IRLZ34N , IRLZ34NL , IRLZ34NS , IRLZ40 , IRLZ44 , IRLZ44A , IRLZ44N , IRLZ44NL , TK10A60D , ITF86110DK8T , ITF86116SQT , ITF86130SK8T , ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT .
History: IRFP140
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History: IRFP140



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