AM30N10-78D Specs and Replacement

Type Designator: AM30N10-78D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO-252

AM30N10-78D substitution

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AM30N10-78D datasheet

 ..1. Size:86K  analog power
 am30n10-78d.pdf pdf_icon

AM30N10-78D

Analog Power AM30N10-78D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 98 @ VGS = 4.5V 19 bat... See More ⇒

 5.1. Size:296K  analog power
 am30n10-70d.pdf pdf_icon

AM30N10-78D

Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V 26 Low thermal impedance 100 92 @ VGS = 4.5V 25 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co... See More ⇒

 5.2. Size:143K  analog power
 am30n10-70de.pdf pdf_icon

AM30N10-78D

Analog Power AM30N10-70DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 92 @ VGS = 4.5V 20 ... See More ⇒

 6.1. Size:65K  analog power
 am30n10-50d.pdf pdf_icon

AM30N10-78D

Analog Power AM30N10-50D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26 converters and power management in portable and 100 59 @ VGS = 4.5V 24 bat... See More ⇒

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Detailed specifications: AM30N03-59D, AM30N06-39D, AM30N06-39IE, AM30N06-65DA, AM30N08-80D, AM30N10-50D, AM30N10-70D, AM30N10-70DE, SI2302, AM30N15-60D, AM30N20-400PCFM, AM30N20-78D, AM30N25-270P, AM30P06-40D, AM30P06-45D, AM30P10-80D, AM3400

Keywords - AM30N10-78D MOSFET specs

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