AM30N20-78D PDF and Equivalents Search

 ..1. Size:85K  analog power
 am30n20-78d.pdf

Analog Power AM30N20-78D N-Channel 200-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 200 92 @ VGS = 5.5V 20 bat... See More ⇒

 6.1. Size:307K  analog power
 am30n20-400pcfm.pdf

Analog Power AM30N20-400PCFM N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 400 @ VGS = 10V 9 Low thermal impedance 200 450 @ VGS = 5.5V 8.5 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED bo... See More ⇒

 8.1. Size:293K  analog power
 am30n25-270p.pdf

Analog Power AM30N25-270P N-Channel 250-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 300 @ VGS = 10V Low thermal impedance 250 26a 450 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circu... See More ⇒

 9.1. Size:138K  analog power
 am30n02-40d.pdf

Analog Power AM30N02-40D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34 circuitry. Typical applications are PWMDC-DC 20 43 @ VGS = 2.5V 22 converters... See More ⇒

 9.2. Size:139K  analog power
 am30n02-59d.pdf

Analog Power AM30N02-59D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24 circuitry. Typical applications are PWMDC-DC 20 88 @ VGS = 2.5V 20 converters... See More ⇒

 9.3. Size:153K  analog power
 am30n03-59d.pdf

Analog Power AM30N03-59D N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24 circuitry. Typical applications are PWMDC-DC 30 88 @ VGS = 4.5V 20 converters,... See More ⇒

 9.4. Size:203K  analog power
 am30n06-39ie.pdf

Analog Power AM30N06-39IE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batt... See More ⇒

 9.5. Size:294K  analog power
 am30n08-80d.pdf

Analog Power AM30N08-80D N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 82 @ VGS = 10V 21 Low thermal impedance 80 110 @ VGS = 4.5V 18 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv... See More ⇒

 9.6. Size:291K  analog power
 am30n06-65da.pdf

Analog Power AM30N06-65DA N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 65 @ VGS = 10V 23 Low thermal impedance 60 78 @ VGS = 4.5V 21 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.7. Size:296K  analog power
 am30n10-70d.pdf

Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V 26 Low thermal impedance 100 92 @ VGS = 4.5V 25 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co... See More ⇒

 9.8. Size:143K  analog power
 am30n10-70de.pdf

Analog Power AM30N10-70DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 92 @ VGS = 4.5V 20 ... See More ⇒

 9.9. Size:306K  analog power
 am30n15-60d.pdf

Analog Power AM30N15-60D N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 69 @ VGS = 10V 22 Low thermal impedance 150 110 @ VGS = 5.5V 18 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI... See More ⇒

 9.10. Size:86K  analog power
 am30n10-78d.pdf

Analog Power AM30N10-78D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 98 @ VGS = 4.5V 19 bat... See More ⇒

 9.11. Size:65K  analog power
 am30n10-50d.pdf

Analog Power AM30N10-50D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26 converters and power management in portable and 100 59 @ VGS = 4.5V 24 bat... See More ⇒

 9.12. Size:293K  analog power
 am30n03-40d.pdf

Analog Power AM30N03-40D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 29 @ VGS = 10V 34 Low thermal impedance 30 43 @ VGS = 4.5V 28 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS ... See More ⇒

 9.13. Size:175K  analog power
 am30n06-39d.pdf

Analog Power AM30N06-39D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batte... See More ⇒

 9.14. Size:1315K  jiaensemi
 jfam30n60e.pdf

JFAM30N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

 9.15. Size:724K  jiaensemi
 jfam30n50e.pdf

JFAM30N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

 9.16. Size:1346K  cn vbsemi
 am30n06-39d.pdf

AM30N06-39D www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒

 9.17. Size:262K  inchange semiconductor
 am30n10.pdf

isc N-Channel MOSFET Transistor AM30N10 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LED backlighting Power supply Switching applications A... See More ⇒