AM30P10-80D MOSFET. Datasheet pdf. Equivalent
Type Designator: AM30P10-80D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 33 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-252
AM30P10-80D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM30P10-80D Datasheet (PDF)
am30p10-80d.pdf
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am30p06-40d.pdf
Analog Power AM30P06-40DP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)40 @ VGS = -10V -29 Low thermal impedance -6055 @ VGS = -4.5V -25 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
am30p06-45d.pdf
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