AM30P10-80D Specs and Replacement
Type Designator: AM30P10-80D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-252
AM30P10-80D substitution
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AM30P10-80D datasheet
am30p10-80d.pdf
Analog Power AM30P10-80D P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 80 @ VGS = -10V 25 converters and power management in portable and -100 battery-powered produ... See More ⇒
am30p06-40d.pdf
Analog Power AM30P06-40D P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 40 @ VGS = -10V -29 Low thermal impedance -60 55 @ VGS = -4.5V -25 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX... See More ⇒
am30p06-45d.pdf
Analog Power AM30P06-45D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management 49 @ VGS = -10V 28 circuitry. Typical applications are PWM DC-DC -60 converters, power management ... See More ⇒
Detailed specifications: AM30N10-70DE, AM30N10-78D, AM30N15-60D, AM30N20-400PCFM, AM30N20-78D, AM30N25-270P, AM30P06-40D, AM30P06-45D, IRFZ24N, AM3400, AM3400A, AM3400N, AM3401, AM3402N, AM3403P, AM3405P, AM3406
Keywords - AM30P10-80D MOSFET specs
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