All MOSFET. AM3400 Datasheet

 

AM3400 Datasheet and Replacement


   Type Designator: AM3400
   Marking Code: E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 243 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23
 

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AM3400 Datasheet (PDF)

 ..1. Size:327K  ait semi
am3400.pdf pdf_icon

AM3400

AiT Semiconductor Inc. AM3400 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400 is the N-Channel logic enhancement 30V/5.8A, R =28m(typ.)@V =10V DS(ON) GSmode power field effect transistor is produced using 30V/5.0A, R =30m(typ.)@V =4.5V DS(ON) GShigh cell density. Advanced trench technology to 30V/3.5A, R =40m(typ.)@V =2.

 0.1. Size:319K  analog power
am3400n.pdf pdf_icon

AM3400

Analog Power AM3400NN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)950 @ VGS = 10V1.2 Low thermal impedance 2001100 @ VGS = 5.5V1.1 Fast switching speed Typical Applications: White LED boost converters TSOP-6 Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

 0.2. Size:326K  ait semi
am3400a.pdf pdf_icon

AM3400

AiT Semiconductor Inc. AM3400A www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400A is the N-Channel logic enhancement 30V/5.8A, R =22m(typ.)@V =10V DS(ON) GSmode power field effect transistor is produced using 30V/5.0A, R =25m(typ.)@V =4.5V DS(ON) GShigh cell density. Advanced trench technology to 30V/3.5A, R =31m(typ.)@V =

 9.1. Size:136K  analog power
am3406n.pdf pdf_icon

AM3400

Analog Power AM3406NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 10 V 6.3power management circuitry. Typical 30applications are power switch, power 0.044 @ VGS = 4.5V 5

Datasheet: AM30N10-78D , AM30N15-60D , AM30N20-400PCFM , AM30N20-78D , AM30N25-270P , AM30P06-40D , AM30P06-45D , AM30P10-80D , IRF830 , AM3400A , AM3400N , AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N .

Keywords - AM3400 MOSFET datasheet

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