AM3415A Datasheet and Replacement
Type Designator: AM3415A
Marking Code: E3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT-23
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AM3415A Datasheet (PDF)
am3415a.pdf

AM3415A AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to V = -20V,I =-4A DS Dprovide excellent R , low gate charge and R
am3415.pdf

AiT Semiconductor Inc. AM3415 www.ait-ic.com SOT-23 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3415 is the P-Channel logic enhancement -20V/-4.0A, R =45m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.0A, R =54m(typ.)@V =-2.5V DS(ON) GShigh cell density. Advanced trench technology to provide ex
am3413p.pdf

Analog Power AM3413PP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2400 @ VGS = -10V -0.74 Low thermal impedance -2002550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
am3412n.pdf

Analog Power AM3412NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)27 @ VGS = 10V6.3 Low thermal impedance 3035 @ VGS = 4.5V5.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
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