All MOSFET. AM3904N Datasheet

 

AM3904N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM3904N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.7 nC
   trⓘ - Rise Time: 11 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TSOP-6

 AM3904N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM3904N Datasheet (PDF)

 ..1. Size:235K  analog power
 am3904n.pdf

AM3904N AM3904N

Analog Power AM3904NDual N-Channel Logic Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A)this device ideal for use in power management circuitry. Typical applications are logic switch 0.45 @ VGS = 4.5 V 0.5control, power manageme

 9.1. Size:225K  analog power
 am3906n.pdf

AM3904N AM3904N

Analog Power AM3906NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A)this device ideal for use in power management circuitry. Typical applications are DC-DC 0.099 @ VGS = 10 V 2.5converters, power management

 9.2. Size:233K  analog power
 am3902n.pdf

AM3904N AM3904N

Analog Power AM3902NDual N-Channel Logic Level MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (OHM) ID (A)applications are DC-DC converters and 4.0 @ VGS = 4.5 V 0.4power management in portable and 25battery-powered p

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