AM3922N
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM3922N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 4.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.5
nC
trⓘ - Rise Time: 12
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047
Ohm
Package:
TSOP-6
AM3922N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM3922N
Datasheet (PDF)
..1. Size:134K analog power
am3922n.pdf
Analog Power AM3922NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.047 @ VGS = 4.5 V 4.1converters and power management in portable and 20battery-powere
9.1. Size:114K analog power
am3925p.pdf
Analog Power AM3925PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -3.2converters and power management in portable and -20battery-powered produc
9.2. Size:114K analog power
am3921p.pdf
Analog Power AM3921PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.5-20battery-powered products
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