AM3925P MOSFET. Datasheet pdf. Equivalent
Type Designator: AM3925P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.2 nC
trⓘ - Rise Time: 20 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: TSOP-6
AM3925P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM3925P Datasheet (PDF)
am3925p.pdf
Analog Power AM3925PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -3.2converters and power management in portable and -20battery-powered produc
am3922n.pdf
Analog Power AM3922NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.047 @ VGS = 4.5 V 4.1converters and power management in portable and 20battery-powere
am3921p.pdf
Analog Power AM3921PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.5-20battery-powered products
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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