AM3940N
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM3940N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.2
nC
trⓘ - Rise Time: 5
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058
Ohm
Package:
TSOP-6
AM3940N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM3940N
Datasheet (PDF)
..1. Size:151K analog power
am3940n.pdf
Analog Power AM3940NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 3.5converters and power management in portable and 40battery-powered products su
0.1. Size:176K analog power
am3940ne.pdf
Analog Power AM3940NEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 3.5converters and power management in portable and 40battery-powered products s
9.1. Size:177K analog power
am3949p.pdf
Analog Power AM3949PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.185 @ VGS = -10V -2.5-40battery-powered products s
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